Low dimensional materials constitute an exciting and unusually tunable platform for investigation of correlated states. Here I will present our results on transport measurements of high quality few-layer graphene and black phosphorus devices. In Bernal-stack trilayer grapehne, we observe tunable integer and fractional quantum Hall states, and quantum parity effect at the charge neutrality point. In tetralayer graphene, we have observed a large intrinsic gap at half filling, up to 80 meV, that arises from electronic interactions in rhombohedral stacking, and multiple Lifshitz transitions in Bernal stacking. Lastly, I will discuss our recent observation of robust long distance spin transport through the antiferromagnetic state in graphene.